| PART |
Description |
Maker |
| SBRT5A50SAF-13 |
5A Trench SBR TRENCH SUPER BARRIER RECTIFIER
|
Diodes
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| 60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package
TRENCH SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
